CHICAGO –August 17, 2021 – Littelfuse, Inc. (NASDAQ: LFUS) an industrial technology manufacturing company empowering a sustainable, connected, and safer world, today announced the expansion of its silicon carbide (SiC) diodes portfolio to include the 1700 V-class. View the video.

The LSIC2SD170Bxx Series SiC Schottky Diodes are available in the TO-247-2L package with a choice of current ratings (10A, 25A, or 50A). They offer power electronics system designers a variety of performance advantages, including close-to-zero reverse recovery current, high surge capability, and a maximum operating junction temperature of 175°C, so they are ideal for applications that require enhanced efficiency, reliability, and simplified thermal management.

SiC Schottky barrier diodes are ideal in a wide range of AC/DC and DC/DC power converters for industry, energy generation, and energy distribution/storage, including:

•             Industrial switch-mode power supplies,

•             Uninterruptable power supplies,

•             Battery chargers,

•             Solar inverters,

•             Industrial motor drives, and

•             High speed rectifiers.

“Using SiC diodes in power designs instead of diodes based on legacy silicon-based technology helps designers develop more energy efficient power converters, saving energy and reducing costs related to cooling the power electronics,” said Francois Perraud, Product Marketing Manager, SiC Productsat Littelfuse. “They enable the design of faster switching power electronics in the converters which can then be made more compact at the same output power or pack more power in the same volume.”

The LSIC2SD170Bxx SiC Schottky diodesoffer these key benefits:

• Positive temperature coefficient of the forward voltage for safe operation and ease of paralleling
• Extremely fast, temperature-independent switching
• Dramatically reduced switching losses compared to Si bipolar diodes
• Optimized overall system efficiency

Availability

The LSIC2SD170Bxx SiC Schottky Diodes are available in the TO-247-2L package, in tube, with a minimum order quantity of 450 devices. Sample requests can be placed through authorized Littelfuse distributors worldwide. For a listing of Littelfuse distributors, please visit Littelfuse.com.

For More Information

Additional information is available on the LSIC2SD170Bxx SiC Schottky Diodes product page. For technical questions, please contact: Francois Perraud, Product Marketing Manager at FPerraud@Littelfuse.com.

PHOENIX, Ariz. –May 4, 2021 – ON Semiconductor (Nasdaq:ON), driving energy efficient innovations, will be introducing new Super-junction (SJ) MOSFETs and SiC diodes as part of its activities during the 2021 PCIM Europe Digital Event commencing today.

Efficiency and reliability are increasing important in power applications, not least so manufacturers can meet more stringent international standards. The 650 V SUPERFET® III FAST SJ MOSFETs deliver better switching performance than other SJ MOSFETs on the market, with improved efficiency and higher system reliability. These features are in high demand in fast-growing markets, including 5G, electric vehicle (EV) charging stations, telecoms and server sectors.

ON Semiconductor will also be introducing automotive AECQ101 and industrial grade qualified next generation 1200 V SiC diodes, ideal for high power applications such as EV charging stations and solar inverters, UPS, electric vehicles (EV) on-board chargers (OBC), and EV DC-DC Converters. SiC diodes offer significant advantages over silicon solutions, including higher reliability, lower EMI and simpler cooling requirements. The new design improves on the first generation SiC diodes thanks to a smaller die size and lower capacitance. The NVDSH20120C, NDSH20120C, NVDSH50120C, and NDSH50120C deliver a lower forward voltage drop and a 4x increase in rated current, with a higher rate of change (di/dt) of 3500 A/µs. The smaller die size also returns a 20 % lower thermal resistance in an F2 package.

ON Semiconductor will also be presenting at PCIM Europe onMay 4 at multiple sessions. As part of the IPMs, Motion Control and Drives session on the following topics:

• Third Generation of Automotive 650 V Intelligent Power Module System for Auxiliary Motor Drive Applications presented by Bumseung Jin
• Solutions for Off-Board EV Charging presented by Guillem Gargallo
• Third Generation of Automotive 650V Intelligent Power Module System for Auxiliary Motor Drive Applications presented by Andrea Colognese.

In addition to these activities, ON Semiconductor will also be hosting three live webinars, details can be found here. To register as a visitor to PCIM Europe 2021, please visit https://pcim.mesago.com/nuernberg/en.html.

Demand for autonomous and hybrid vehicles is rapidly increasing, and the demand for fuel-efficient power transform electronics for the automobile industry is becoming crucial. Electronic devices can be used efficiently and efficiently at high temperatures. Owing to these factors, silicon carbide technology is beginning to gain traction to increase the supply of electric vehicles and hybrid electric vehicles for power electronics.

Applicability Extending Beyond Automotive & Aerospace

The demand for SiC diodes is growing due to their high-temperature capabilities owing to the ample energy band gap between silicon carbide and gallium arsenide or pure silicon, which is one of the significant advantages of SiC diodes. The wider band gap of silicon carbide material helps reduce intrinsic carrier absorption for high-temperature operations as well as helps reduce leakage currents. These characteristics of SiC diodes are mainly used for higher frequency light detection, higher frequency switching, and high-temperature devices. Moreover, due to their high-temperature capabilities, the demand for silicon carbide diodes is increasing rapidly in various application areas such as data centers, aerospace, and automotive.

Increasing demand for high-power semiconductors due to the revolution in electronic equipment has covered the power supply and automation industries, as well as opened up various possibilities for controlling how electrical energy is transmitted and used. Improvements in power electronic devices were primarily based on the procedures and technology developed mainly for low-power applications and then adjusted & configured to allow components to handle high voltages and currents to meet the specifications of higher energy ratings. These advancements in power semiconductors have led to significant improvements in power electronics applications in terms of power handling capability and control. Due to these factors, the demand for silicon carbide materials and devices is increasing rapidly.

East Asia’s Market Continues to Represent Prominent Position, Globally

The global SiC diodes market is expected to mark a total incremental opportunity of US$ 467.2 Mn during the forecast period of 2018 to 2028. The global SiC diodes market research report has segmented the global SiC diodes market by forward current, reverse voltage, application, and region. The forward current segment is further segmented into 2 to 5 A, 6 to 10 A, 11 to 20 A, 21 to 40 A, and above 40 A. The reverse voltage segment is further segmented into 600V/650 V, 1200 V, 1700 V, and 3300 V. Moreover, the application of SiC diodes include automotive, medical imaging, communication, data centers, defense, photovoltaic solutions, and others.

Based on region, East Asia is among the more significant markets in the global SiC diodes market owing to the existence of various key players. Moreover, the adoption of SiC diodes in the medical imaging, communication, and automobile industries are also among factors driving the SiC diodes market. The SiC diodes markets in South Asia are likely to witness growth with a high CAGR during the forecast period due to the growing penetration of advanced communication systems and the growing demand for high-power semiconductors in some countries of this region. Furthermore, a constant increase in the total number of companies that provide SiC diodes in South and East Asian countries is expected to positively impact the growth of the SiC diodes market during the forecast period.

Some of the key players in the global SiC diodes market research report include Infineon Technologies, STMicroelectronics N.V., Microchip Technology Inc., Cree, Inc., ON Semiconductor Corporation, ROHM Semiconductor, Littelfuse Inc., WeEn Semiconductors, CALY Technologies, and United Silicon Carbide Inc. These companies in the SiC diodes market are continually focusing on providing leading products and following the strategy of entering into partnerships with and acquiring other SiC diodes providers to offer enhanced products as well as to reach new growth markets during the forecast period.

These insights are based on a report on SiC Diodes Market by Persistence Market Research